![The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study | Scientific.Net The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study | Scientific.Net](https://www.scientific.net/MSF.457-460.1025/preview.gif)
The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study | Scientific.Net
![Annealing Effect on Characteristics of p+n 4H-SiC Diode Formed by Al Ion Implantation | Scientific.Net Annealing Effect on Characteristics of p+n 4H-SiC Diode Formed by Al Ion Implantation | Scientific.Net](https://www.scientific.net/MSF.600-603.1023/preview.gif)
Annealing Effect on Characteristics of p+n 4H-SiC Diode Formed by Al Ion Implantation | Scientific.Net
OSA | Implantation energy- and size-dependent light output of enhanced-efficiency micro-LED arrays fabricated by ion implantation
![Avalanche Breakdown Characteristics of 4H-SiC Graded p+-n Junction Formed with Aluminum Ion-Implanted p+-Layer | Scientific.Net Avalanche Breakdown Characteristics of 4H-SiC Graded p+-n Junction Formed with Aluminum Ion-Implanted p+-Layer | Scientific.Net](https://www.scientific.net/MSF.615-617.675/preview.gif)
Avalanche Breakdown Characteristics of 4H-SiC Graded p+-n Junction Formed with Aluminum Ion-Implanted p+-Layer | Scientific.Net
![Effect of 60 keV argon ion implantation in Makrofol ® DE 1-1 on the optical properties | SpringerLink Effect of 60 keV argon ion implantation in Makrofol ® DE 1-1 on the optical properties | SpringerLink](https://media.springernature.com/lw685/springer-static/image/art%3A10.1007%2Fs00289-019-03072-8/MediaObjects/289_2019_3072_Fig1_HTML.png)
Effect of 60 keV argon ion implantation in Makrofol ® DE 1-1 on the optical properties | SpringerLink
![Ion Implantation as a Tool for Controlled Modification of Photoelectrical Properties of Silicon | IntechOpen Ion Implantation as a Tool for Controlled Modification of Photoelectrical Properties of Silicon | IntechOpen](https://www.intechopen.com/media/chapter/61442/media/F5.png)
Ion Implantation as a Tool for Controlled Modification of Photoelectrical Properties of Silicon | IntechOpen
![Impact of defects on the electrical properties of p–n diodes formed by implanting Mg and H ions into N-polar GaN: Journal of Applied Physics: Vol 126, No 12 Impact of defects on the electrical properties of p–n diodes formed by implanting Mg and H ions into N-polar GaN: Journal of Applied Physics: Vol 126, No 12](https://aip.scitation.org/action/showOpenGraphArticleImage?doi=10.1063/1.5116886&id=images/medium/1.5116886.figures.online.highlight_f1.jpg)
Impact of defects on the electrical properties of p–n diodes formed by implanting Mg and H ions into N-polar GaN: Journal of Applied Physics: Vol 126, No 12
![Vertical Ga2O3 Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation | Semantic Scholar Vertical Ga2O3 Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/9e59e2c6ca210d21a4ae37005fa0439741ec6b3b/1-Figure1-1.png)
Vertical Ga2O3 Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation | Semantic Scholar
![Profiles of implanted atoms before and after annealing at 1800 °C for a... | Download Scientific Diagram Profiles of implanted atoms before and after annealing at 1800 °C for a... | Download Scientific Diagram](https://www.researchgate.net/profile/Adolf-Schoener/publication/234844510/figure/fig1/AS:349483180281859@1460334691960/Profiles-of-implanted-atoms-before-and-after-annealing-at-1800-C-for-a-Al-and-b-B.png)
Profiles of implanted atoms before and after annealing at 1800 °C for a... | Download Scientific Diagram
![PDF] A p-n homojunction ZnO nanorod light-emitting diode formed by As ion implantation | Semantic Scholar PDF] A p-n homojunction ZnO nanorod light-emitting diode formed by As ion implantation | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/e4f142968d454c252c50d192542effb83a27d54e/2-Figure1-1.png)
PDF] A p-n homojunction ZnO nanorod light-emitting diode formed by As ion implantation | Semantic Scholar
![I-V characteristics of PN diodes fabricated by gas-phase doping and... | Download Scientific Diagram I-V characteristics of PN diodes fabricated by gas-phase doping and... | Download Scientific Diagram](https://www.researchgate.net/profile/Yoshiaki-Nakano-2/publication/224708188/figure/fig1/AS:341644353261570@1458465769330/I-V-characteristics-of-PN-diodes-fabricated-by-gas-phase-doping-and-phosphorus-ion.png)